Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators
Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators
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DOI：
10.1063/1.4955469
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发表时间：
2016-07-14
影响因子：
3.2
通讯作者：
Verona-Rinati, G.
中科院分区：
文献类型：
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作者：
Verona, C.;Ciccognani, W.;Verona-Rinati, G.
本文报道了用具有高电子亲和势的绝缘体如Nb_2O_5、WO_3、V_2O_5和MoO_3对氢化单晶金刚石表面进行转移掺杂的比较研究。还研究了低电子亲和势Al 2 O3以进行比较。通过霍尔效应测量，在钝化的氢化金刚石膜的空穴传输性能进行了评估，并进行了比较，以未钝化的金刚石膜（空气诱导掺杂）。在钝化样品中观察到的导电性，随时间的稳定性，和耐高温方面的显着改善。所研究的绝缘体作为氢化金刚石表面电子接受材料的效率与其电子结构一致。这些表面受体材料产生较高的空穴片浓度，高达6.5 × 10（13）cm（-2），和较低的薄层电阻，低至2.6 k Ω/sq，与大气诱导的值分别为约1 × 10（13）cm（-2）和10 k Ω/sq相比。另一方面，空穴迁移率降低，通过使用高电子亲和性绝缘体掺杂剂。空穴迁移率作为在氢化金刚石层的空穴浓度的函数进行了研究，显示出一个明确的单调下降的趋势。出版社：AIP Publishing
We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 x 10(13) cm(-2), and a lower sheet resistance, down to 2.6 k Omega/sq, in comparison to the atmosphere-induced values of about 1 x 10(13) cm(-2) and 10 kX/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend. Published by AIP Publishing.