Liquid-phase deposition of thin Si and Ge films based on ballistic electro-reduction
Liquid-phase deposition of thin Si and Ge films based on ballistic electro-reduction
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基于弹道电还原的 Si 和 Ge 薄膜的液相沉积
DOI：
10.1149/05009.0691ecst
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and N. Koshida
中科院分区：
文献类型：
--
作者：
T. Ohta;R. Mentek;B. Gelloz;N. Mori;and N. Koshida
提出了一种基于弹道电子注入溶液的湿法沉积硅锗薄膜的方法。纳米晶硅（nc-Si）二极管，由薄Au (10 nm)， nc-Si层（~ 1 μ m），多晶硅和n+ si衬底组成，在溶液中作为表面发射的主动冷阴极工作。当在SiCl4和GeCl4溶液中单独驱动而不使用任何对电极时，在nc-Si层中产生的准弹道电子从外表面射出，直接还原了Si和Ge离子，并在发射表面沉积了薄的非晶Si4+和Ge4+薄膜，没有副产物，也没有污染。根据沉积的Si和Ge薄膜的结构和成分特征，讨论了该沉积方式与传统干法沉积方式的具体特点。
An alternative wet process for depositing thin Si and Ge films is presented based on the ballistic electron injection into solutions. A nanocrystalline silicon (nc-Si) diode, composed of a thin Au (10 nm), nc-Si layer (~ 1 µm), polycrystalline silicon, and n+-Si substrate, operates as a surface-emitting active cold cathode in solutions. When driven alone in SiCl4 and GeCl4 solutions without using any counter electrodes, quasi-ballistic electrons generated in the nc-Si layer and ejected from the outer surface directly reduce Si and Ge ions followed by the deposition of thin amorphous Si4+ and Ge4+ films on the emitting surface with neither byproducts nor contaminations. Based on the structural and compositional characterizations of deposited Si and Ge films, the specific features of this deposition mode are discussed in comparison with the conventional dry process.