A new surface electron-emission mechanism in diamond cathodes
A new surface electron-emission mechanism in diamond cathodes
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DOI：
10.1038/30900
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发表时间：
1998-06-04
期刊：
影响因子：
64.8
通讯作者：
Tabat, MD
中科院分区：
文献类型：
--
作者：
Geis, MW;Efremow, NN;Tabat, MD
基于金属-金刚石-真空三重结处电场的增强，提出了冷阴极的电子发射机理。与电子从金属或半导体直接隧穿进入真空的传统机制不同，电子从金属隧穿进入金刚石表面态，在那里它们被加速到足以喷射到真空中的能量。金刚石阴极设计优化这一机制表现出一些最低的工作电压达到目前为止。
An electron-emission mechanism for cold cathodes is described based on the enhancement of electric fields at metal-diamond-vacuum triple junctions. Unlike conventional mechanisms, in which electrons tunnel from a metal or semiconductor directly into vacuum, the electrons here tunnel from a metal into diamond surface states, where they are accelerated to energies sufficient to be ejected into vacuum. Diamond cathodes designed to optimize this mechanism exhibit some of the lowest operational voltages achieved so far.