Bulk growth of gallium nitride: challenges and difficulties
Bulk growth of gallium nitride: challenges and difficulties
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DOI：
10.1002/crat.200711002
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发表时间：
2007-12
影响因子：
1.5
通讯作者：
M. Boćkowski
中科院分区：
文献类型：
--
作者：
M. Boćkowski
综述了高压溶液法（HPS）以及HPS与氢化物气相外延（HVPE）相结合的方法生长GaN体材料的研究现状。到目前为止，GaN的自发高压溶液生长导致晶体具有表面积为3cm 2的六方片晶或长度高达1cm的针状物的习性。最近，血小板和针状物已被用作HVPE生长的种子。另一方面，已经研究和开发了压力下的LPE技术，其中压力生长GaN（hp-GaN）、GaN/蓝宝石模板、图案化GaN/蓝宝石模板和独立HVPE GaN作为种子。（© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The present status of the GaN bulk growth by High Pressure Solution (HPS) method and combination of HPS and Hydride Vapor Phase Epitaxy (HVPE) methods is reviewed. Up to now the spontaneous high pressure solution growth of GaN results in crystals having habit of hexagonal platelets of surface area of 3 cm2 or needles with length up to 1 cm. Recently, the platelets and needles have been used as seeds for the HVPE growth. On the other hand, the LPE technique under pressure with pressure‐grown GaN (hp‐GaN), GaN/sapphire template, patterned GaN/sapphire template and free standing HVPE GaN as seeds has been examined and developed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)