The influence of morphologies and doping of nanostructured ZnO on the field emission behaviors
The influence of morphologies and doping of nanostructured ZnO on the field emission behaviors
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纳米ZnO形貌和掺杂对场发射行为的影响
DOI：
10.1016/j.sse.2009.03.024
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发表时间：
2009-06-01
影响因子：
1.7
通讯作者：
Ye, Zhizhen
中科院分区：
文献类型：
--
作者：
Zhang, Zesong;Huang, Jingyun;Ye, Zhizhen
研究了ZnO纳米尖阵列、纳米线阵列以及Al掺杂ZnO纳米线的场发射特性。通过比较不同形貌的ZnO材料，发现纳米结构ZnO材料的形貌对其场发射性能，特别是开启电场和发射电流密度起着至关重要的作用。其中，ZnO纳米尖阵列具有较低的开启电场和较高的电流密度，这主要归因于纳米尺度上较小的发射极半径和良好的垂直排列。在ZnO纳米线中掺杂Al可以有效地提高载流子浓度，从而提高ZnO纳米线的场发射性能。这导致场增强因子的增加和功函数的减小。从发射持续性测量来看，发射稳定性非常好。(C)2009爱思唯尔有限公司版权所有。
The field-emission properties of the ZnO nanotip arrays, nanowire arrays as well as Al-doped ZnO nanowires were investigated in detail. After comparison of the different morphologies, it was found that the morphology of the nanostructure ZnO materials has played a crucial role in their field emission performances, especially the turn-on field and the emission current density. Among them, the ZnO nanotip arrays have the lower turn-on field, higher current density, which is attributed to the small emitter radius on the nanoscale and the well vertical align on the substrates. It can effectively improve the field-emission property to dope aluminium in ZnO nanowires because of the carrier concentration increasing. which results in the increase of the field enhancement factor and the reduction of the work function. The emission stability is very good from the emission persistence measurement. (C) 2009 Elsevier Ltd. All rights reserved.