Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE
Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE
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DOI：
10.1088/0256-307x/34/7/076105
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发表时间：
2017-06
影响因子：
3.5
通讯作者：
Xiaoyong Zhao;Yang Zhang;L. Cui;Min Guan;Baoqiang Wang;Zhanping Zhu;Yiping Zeng
中科院分区：
文献类型：
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作者：
Xiaoyong Zhao;Yang Zhang;L. Cui;Min Guan;Baoqiang Wang;Zhanping Zhu;Yiping Zeng
我们报告了通过分子束外延 (MBE) 直接在 GaAs (001) 衬底上生长 InSb 层，无需任何缓冲层。研究了生长温度和V/III通量比对InSb薄膜晶体质量、表面形貌和电性能的影响。 InSb 样品的室温迁移率为 44600 cm/Vs，是在优化的生长条件下生长的。研究了InSb外延缺陷对电性能的影响，推断In空位（V）和Sb反位（Sb缺陷）的形成是浓度随生长温度和Sb/In通量比变化的主要原因。证明了InSb样品的迁移率随温度在90 K到360 K范围内的变化，并讨论了位错散射机制和声子散射机制。
We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface morphology and the electrical properties of InSb thin films are investigated. The InSb samples with room-temperature mobility of 44600 cm/Vs are grown under optimized growth conditions. The effect of defects in InSb epitaxial on the electrical properties is researched, and we infer that the formation of In vacancy (V) and Sb anti-site (Sb defects is the main reason for concentrations changing with growth temperature and Sb/In flux ratios. The mobility of the InSb sample as a function of temperature ranging from 90 K to 360 K is demonstrated and the dislocation scattering mechanism and phonon scattering mechanism are discussed.