Low loss Ge-on-Si waveguides operating in the 8-14 um atmospheric transmission window
Low loss Ge-on-Si waveguides operating in the 8-14 um atmospheric transmission window
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DOI：
10.1364/oe.26.025667
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发表时间：
2018-10-01
期刊：
影响因子：
3.8
通讯作者：
Paul, D. J.
中科院分区：
文献类型：
--
作者：
Gallacher, K.;Millar, R. W.;Paul, D. J.
锗硅波导的建模，制造和表征波长范围从7.5到11 μ m。测量的波导损耗对于TE和TM偏振都低于5dB/cm，并且对于TE偏振的>= 10 μ m波长达到类似于1dB/cm的值。这项工作首次通过实验证明，锗硅是一个可行的波导平台，用于在分子指纹光谱区进行传感。详细的建模和分析，以确定各种损失的贡献，表明与实际技术的损失低于1 dB/cm可以实现整个测量范围。由The Optical Society根据Creative Commons Attribution 4.0 License条款发布。
Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 mu m. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of similar to 1 dB/cm for >= 10 mu m wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.