MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage
MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage
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通过解析近似进行 MOS 建模。
DOI：
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发表时间：
1979
期刊：
影响因子：
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通讯作者：
H. Pötzl
中科院分区：
文献类型：
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作者：
W. Fichtner;H. Pötzl
通过与实验结果和二维数值计算的对比，建立了MOS晶体管19的亚阈值电流和阈值电压分析模型。对于短通道装置，根据Taylor（1978）和Poon（1973）的四参数拟合模型计算的子电流与实验结果吻合得很好。Taylor也很好地描述了阈值电压的短通道下降。本文提出了一个新的计算公式，提高了与实测结果的一致性。Wang（1977）的模型很好地描述了离子注入短通道器件的阈值电压，如果正确地考虑了散射对退火的增加。
Analytical modelling of subthreshold current and threshold voltage of MOS transistors 19 tested by comparison with experimental results and two-dimensional numerical calculations. For short channel devices the subthreshould current calculated according to Taylor (1978) and to the four-parameter fitting model of Poon (1973) is found to agree well with experiment. The short channel decrease of threshold voltage is also well described by Taylor. A new formula is suggested in this paper which improves the agreement with measured results. The threshold voltage of ion-implanted short-channel devices is well described by the model of Wang (1977) if the increase of the straggle duo to annealing is correctly accounted for.