Design of a GaN-based, 9-level flying capacitor multilevel inverter with low inductance layout
Design of a GaN-based, 9-level flying capacitor multilevel inverter with low inductance layout
复制标题
低电感布局的GaN基9级飞跨电容多电平逆变器的设计
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
R. Pilawa
中科院分区：
文献类型：
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作者：
T. Modeer;C. Barth;N. Pallo;Wonho Chung;T. Foulkes;R. Pilawa
飞跨电容器多电平逆变器 (FCML) 等多电平逆变器在逆变器尺寸和重量受到限制的应用中具有巨大的潜在优势。这项工作介绍了逆变器模块的设计和实现，该模块在交错设计中包含两个单独的 9 电平 FCML 单相逆变器。每个逆变器均采用 GaN FET，开关频率为 100 kHz，有效电感纹波频率为 800 kHz。该实施采用创新的双面集成开关单元布局，可降低逆变器的有效换向环路电感，实现快速开关并最小化振铃，同时简化高效的双面冷却。
Multilevel inverters such as the flying capacitor multilevel inverter (FCML) hold large potential benefit in applications where the size and weight of the inverter is constrained. This work presents the design and implementation of an inverter module which incorporates two individual 9-level FCML single-phase inverters in an interleaved design. Each inverter utilizes GaN FETs switching at 100 kHz, for an effective inductor ripple frequency of 800 kHz. The implementation features an innovative dual-sided integrated switching cell layout which decreases the effective commutation loop inductance of the inverter and enables fast switching with minimal ringing while also simplifying efficient double-sided cooling.