Exciton and recombination processes in YAG crystals
Exciton and recombination processes in YAG crystals
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DOI：
10.1088/0953-8984/7/29/012
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发表时间：
1995-07
期刊：
影响因子：
--
通讯作者：
V. Murk;N. Yaroshevich
中科院分区：
文献类型：
--
作者：
V. Murk;N. Yaroshevich
研究了掺Sc、La等价杂质的YAG单晶复合发光的激发光谱。在6.7 eV处观察到杂质离子附近捕获的激子的激发带，邻近YAG的本征吸收边。研究和讨论了能量的传递和储存过程以及它们与4.9eV发射带（假定为自陷激子发射）起源问题的关系。直接创建激子的光谱区域与带间跃迁边缘（导致激子的亚稳态字符）的重叠示出。从复合氧化物电子结构的特殊性出发，讨论了弛豫过程的特点。
The excitation spectra of the recombination luminescence of YAG single crystals doped with isovalent impurities of Sc and La are studied. The excitation band of the excitons trapped near impurity ions is observed at 6.7 eV, adjacent to the YAG intrinsic absorption edge. The processes of energy transfer and storage as well as their relation to the problem of the origin of the 4.9 eV emission band (supposed to be self-trapped exciton emission) are studied and discussed. The overlapping of the spectral region of direct creation of excitons with the interband transition edge (causing a metastable character of excitons) is shown. The features of relaxation processes are discussed from the viewpoint of the specificity of the electron structure of complex oxides.