Retention of the Goss orientation between microbands during cold rolling of an Fe3%Si single crystal
Retention of the Goss orientation between microbands during cold rolling of an Fe3%Si single crystal
复制标题
DOI：
10.1016/j.actamat.2006.11.048
复制
发表时间：
2007-04-01
期刊：
影响因子：
9.4
通讯作者：
Raabe, Dierk
中科院分区：
文献类型：
--
作者：
Dorner, Dorothee;Zaefferer, Stefan;Raabe, Dierk
将具有初始{ 1 1 0} 0 0 1取向（也称为戈斯取向）的FeSi单晶冷轧至89%的厚度减小。晶体体积的大部分旋转到两个对称的{1 1 1 } 1 1 2取向。然而，一个弱的高斯分量仍然在高度应变的材料，即使高斯取向是机械不稳定的平面应变载荷下。两种类型的高斯取向的区域是可辨别的材料进行89%的减少。看来这两种类型的戈斯地区有不同的起源。高斯晶粒被发现在剪切带的形式在应变过程中对齐。第二种类型的戈斯区域之间的微带的初始戈斯取向被保留。(c)2007 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
An FeSi single crystal with an initial { 1 1 0} 0 0 1 orientation, also referred to as Goss orientation, was cold rolled up to a thickness reduction of 89%. Most of the crystal volume rotated into the two symmetrical {1 1 1 } 1 1 2 orientations. However, a weak Goss component remained in the highly strained material, even though the Goss orientation is mechanically unstable under plane strain loading. Two types of Goss-oriented regions were discernable in the material subjected to 89% reduction. It appeared that these two types of Goss regions have different origins. Goss grains that were found aligned in shear bands form during straining. A second type of Goss region was found between microbands where the initial Goss orientation was retained. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.