Wet chemical etching of high-temperature superconducting Y-Ba-Cu-O films in ethylenediaminetetraacetic acid
Wet chemical etching of high-temperature superconducting Y-Ba-Cu-O films in ethylenediaminetetraacetic acid
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DOI：
10.1063/1.102366
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发表时间：
1989-12
影响因子：
4
通讯作者：
F. Shokoohi;L. M. Schiavone;C. Rogers;A. Inam;Xindi Wu;L. Nazar;T. Venkatesan
中科院分区：
文献类型：
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作者：
F. Shokoohi;L. M. Schiavone;C. Rogers;A. Inam;Xindi Wu;L. Nazar;T. Venkatesan
报道了一种用于高温超导薄膜的新型湿化学蚀刻剂，它使转变温度在实验精度（1 K）内不受影响，并且不需要再充氧。该溶液由乙二胺四乙酸 (EDTA) 水溶液组成，适合使用标准光刻法进行微图案化。我们在激光沉积 Y-Ba-Cu-O 薄膜上制作了 3-50 μm 的图案。室温下，大部分薄膜在饱和溶液中以 0.14 μm/min 的速度蚀刻。多孔表面层的去除速度比薄膜致密部分的去除速度快三倍。蚀刻速率与溶液浓度呈线性关系，与溶液温度呈指数关系。如果蚀刻中断并且样品暴露在大气中，这些速率会降低。
A new wet chemical etchant for high‐temperature superconducting films is reported, which leaves transition temperature unaffected within experimental accuracy (1 K) and does not require reoxygenation. The solution consists of ethylenediaminetetraacetic acid (EDTA) in water, and is suitable for micropatterning using standard photolithography. We have fabricated 3–50 μm patterns on laser‐deposited Y‐Ba‐Cu‐O films. The bulk of the films etches at 0.14 μm/min in a saturated solution at room temperature. Porous surface layers are removed three times faster than the dense portions of the films. Etch rate depends linearly on the solution concentration and exponentially on the solution temperature. These rates are reduced if etching is interrupted and the samples are exposed to atmosphere.