CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE
CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE
复制标题
DOI：
10.1149/1.2402380
复制
发表时间：
1974-01-01
影响因子：
3.9
通讯作者：
DEAL, BE
中科院分区：
文献类型：
--
作者：
DEAL, BE
本文介绍了与热氧化硅体系有关的四种电荷Qss、Qo、Nst和Not的普遍接受的事实和未解决的问题，并进行了简要讨论。讨论和提供的信息是基于在过去十年中对半导体行业进行的全面调查。虽然关于电荷依赖于器件加工的经验信息相当不错，但关于这些电荷的物理起源，仍有许多有待学习的地方。给出了一个简化模型，表明大部分电荷与热氧化硅结构中的硅键缺陷有关。1962年5月，在加利福尼亚洛杉矶举行的电化学学会会议上，第一次完整的技术会议处理了硅上热氧化物的钝化特性。在此之前，关于这一主题的唯一重要工作来自贝尔实验室，在那里，Atalla, Law， Ligenza和Spitzer， Frosch和Derrick等科学家(1)为硅器件的氧化物钝化提供了背景。
Generally accepted facts along with unanswered questions, concerning the four charges, Qss, Qo, Nst, and Not, associated with the thermally oxidized silicon system are presented and briefly discussed. The discussions and information presented are based on comprehensive investigations carried out in the semiconductor industry over the past ten years. Although reasonably good empirical information concerning charge dependence on device processing is available, much remains to be learned regarding the physical origin of these charges. A simplified model is presented which indicates that most of the charges can be related to silicon bond defects in the thermally oxidized silicon structure.In May 1962, the first complete technical session to deal with passivating properties of thermal oxides on silicon was held at the Electrochemical Society Meeting in Los Angeles, California. Prior to that, the only significant work on the subject was from Bell Laboratories, where such scientists as Atalla, Law, Ligenza and Spitzer, Frosch and Derrick, and others (1), had provided the background for oxide passivation of silicon devices.