The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition
The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition
复制标题
通过热壁化学气相沉积生长低电阻率、重掺杂 4H-SiC 厚外延层
DOI：
10.1016/j.jcrysgro.2013.05.039
复制
发表时间：
2013
影响因子：
1.8
通讯作者：
H. Okumura
中科院分区：
文献类型：
--
作者：
S. Ji;K. Kojima;Y. Ishida;S. Saito;Tomohisa Kato;H. Tsuchida;S. Yoshida;H. Okumura
