Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy
Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy
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DOI：
10.1063/1.120341
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发表时间：
1997-12
影响因子：
4
通讯作者：
G. Zhang;Y. Tong;Z. Yang;S. Jin;J. Li;Z. Gan
中科院分区：
文献类型：
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作者：
G. Zhang;Y. Tong;Z. Yang;S. Jin;J. Li;Z. Gan
实验结果表明，金属有机物气相外延生长的GaN薄膜中的背景载流子浓度与缺陷有关。采用热平衡法计算了理想GaN晶体中与本征缺陷有关的背景载流子浓度。结果表明，在800至1500 K的温度范围内生长的GaN中，N空位浓度不超过2×1017 cm-3。当载流子浓度n为2×1017 cm−3时，N空位是载流子的主要来源之一，这一结论为进一步提高GaN薄膜质量提供了思路。
Experimental results show that the background carrier concentrations in GaN films grown by metalorganic vapor phase epitaxy are related to defects. A thermal equilibrium method was used to calculate the background carrier concentration related to intrinsic defects in an ideal GaN crystal. The results show that the N vacancy concentration does not exceed 2×1017 cm−3 in GaN grown at temperatures ranging from 800 to 1500 K. It can be concluded that the N vacancy is one of the major sources of carriers when the carrier concentration n 2×1017 cm−3; this conclusion may lead to ways for further improving the quality of GaN films.