Modulating the deep-level defects and charge extraction for efficient perovskite solar cells with high fill factor over 86%

Modulating the deep-level defects and charge extraction for efficient perovskite solar cells with high fill factor over 86%
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DOI:
10.1039/d2ee02543d
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发表时间:
2022-09-27
影响因子:
32.5
通讯作者:
Yang, Shangfeng
Yang, Shangfeng
中科院分区:
材料科学1区
文献类型:
--
作者:
Li, Xingcheng;Wu, Xin;Yang, Shangfeng

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由于其飙升的功率转换,Percent太阳能电池(PSC)引起了前所未有的关注;然而,其报道的填充因子(FF)仍然落后于商业化太阳能电池,并且缺乏对机制的全面了解。在这里,我们采用了一种简单有效的策略,通过均匀掺入CsPbBr 3晶体,将FF提高到Shockley-Queisser(S-Q)极限的96.3%,这可以显着钝化深能级空穴缺陷,从而导致空穴迁移率显著增强,以平衡电子迁移率。结果,非辐射复合被抑制沿着增强的载流子提取效率,导致25.09%的显著PCE(认证:24.66%),具有86.9%的记录FF,这是所报道的PSC中最高的FF。深入的分析表明,这种策略可以同时减少由串联电阻,分流电阻和非辐射复合引起的FF损耗。这一工作提供了一个有效的策略,以促进FF接近理论极限。
Perovskite solar cells (PSCs) have drawn unprecedented attention due to their skyrocketing power conversion; however, their reported fill factors (FFs) still lag behind those of commercialized solar cells, and there is a lack of a comprehensive understanding of the mechanism. Here, we employed a facile and effective strategy to improve the FF to 96.3% of the Shockley-Queisser (S-Q) limit through homogeneous incorporation of CsPbBr3 crystals, which could significantly passivate deep-level hole defects, thereby leading to dramatically enhanced hole mobility to balance with electron mobility. As a result, the non-radiative recombination is suppressed along with enhanced carrier extraction efficiency, resulting in a remarkable PCE of 25.09% (certified: 24.66%) with a record FF of 86.9%, which is the highest FF among those of the reported PSCs. An in-depth analysis suggests that this strategy could concurrently reduce the FF loss caused by series resistance, shunt resistance, and non-radiative recombination. This work provides an efficient strategy to promote the FF to approach the theoretical limit.