Voltage-induced payload release and wettability control on TiO2 and TiO2 nanotubes.
Voltage-induced payload release and wettability control on TiO2 and TiO2 nanotubes.
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DOI:
10.1002/anie.200905111
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发表时间:
2010-01
影响因子:
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通讯作者:
Yanyan Song;Poulomi Roy;I. Paramasivam;P. Schmuki
中科院分区:
文献类型:
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作者:
Yanyan Song;Poulomi Roy;I. Paramasivam;P. Schmuki
Since the first report of Fujishima and Honda in 1972,[1] the outstanding photocatalytic properties of TiO2 have built the basis for over 5000 publications [2–4] targeting fundamental aspects and applications, such as photoinduced water splitting,[5, 6] self-cleaning,[7] and organic pollutant degradation.[3] Most recently, the development of high-aspect-ratio selforganized TiO2 nanotube layers [8] has even further widened the use of TiO2 as a very efficient catalyst system [9] that provides a highly defined three-dimensional nanoarchitecture. Some interesting applications of photocatalysis are based on the scission of organic monolayers attached to the TiO2 surface. For example, we recently reported the photoinduced cut of organic monolayers on TiO2 nanotubes for a precise adjustment of the surface wettability [10, 11] and for controlled drug release.[12, 13] The underlying principle of all these photocatalytic reactions is that UV light produces electron–hole pairs in the semiconductive TiO2. The generated charge carriers are ejected to the surrounding electrolyte and create highly reactive redox species; namely, valenceband holes (h+) transferred to water electrolytes have a sufficient energy to produce OHC radicals. These radicals can be used to trigger chain scission in attached hydrocarbon chains, and thus liberate terminal payloads. Herein we show that a pseudo photocatalytic reaction, and in particular chain scission, can be initiated in the absence of light by using an applied voltage that is expected to lead to valence-band hole generation. This may be achieved for sufficiently doped semiconductors under depletion conditions if a bias voltage is applied that is larger than the band gap.[14–17] Such voltage-induced carrier generation has been reported for silicon, where it was exploited for electrochemical etching or metal deposition reactions.[14, 15] To transfer the principle to TiO2 layers, a requirement is that a sufficiently defined and highly doped semiconductive nature of the material can be established (1018–1019 cmÀ3).[16] For this we used anodically formed TiO2 nanotube layers (and for reference anodically formed compact layers) that were annealed to an anatase structure with a doping level of approximately 1.0 1019 cmÀ3.[18] Onto these TiO2 structures we either graftedOPDA (octadecylphosphonic acid) for wettability control experiments, or attached an enzyme, namely horseradish peroxidase (HRP), via a vitamin C linker to demonstrate payload release. Details on sample preparation and characterization are given in the Supporting Information. With these samples, voltage-induced chain scission experiments were carried out in the dark at different anodic voltages in two-and three-electrode electrochemical cells. Figure 1 shows an example for OPDA grafted on a TiO2 surface. For OPDA-modified TiO2 nanotube surfaces, a superhydrophobic wetting behavior is obtained (Figure 1b; non-modified TiO2 nanotube surfaces are superhydrophilic).[10, 11] By immersing the superhydrophobic samples in an aqueous electrolyte and applying a sufficient anodic polarization, significant alterations in the contact angle can be triggered (Figure 1b). The voltage has to be sufficiently anodic (more than 3 VAg/AgCl) to obtain a significant effect. To properly study voltage-induced surface chemistry alterations by XPS, we additionally carried out similar experiments on OPDA-grafted flat (compact) TiO2 surfaces (Figure 1c). To show how crucial the electronic properties and crystallinity of TiO2 are to successfully trigger the reaction, we carried out identical experiments on an amorphous TiO2 surface. From