Electron aspirator using electron-electron scattering in nanoscale silicon
Electron aspirator using electron-electron scattering in nanoscale silicon
复制标题
在纳米级硅中使用电子-电子散射的电子吸气器
DOI：
10.1038/s41467-018-07278-8
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发表时间：
2018
影响因子：
16.6
通讯作者：
Ono Yukinori
中科院分区：
文献类型：
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作者：
Firdaus Himma;Watanabe Tokinobu;Hori Masahiro;Moraru Daniel;Takahashi Yasuo;Fujiwara Akira;Ono Yukinori
在不增加输入功率的情况下提高电流是电子电路要追求的关键问题。然而，金属氧化物半导体（MOS）晶体管的可驱动性受到源极注入电流的限制，并且已经通过源极的电子不可避免地将其动量浪费到声子浴。在这里，我们提出了硅电子吸引器，一个纳米级的MOS器件与T形分支，超越这一限制。该装置利用由于电子-电子散射而产生的电子的流体动力学性质，通过该流体动力学性质，注入的热电子在与声子浴一起弛豫之前将其动量转移到冷电子。这种动量转移在没有附加电源的情况下从接地侧端子诱导电子流。通过观察在8 K下约3倍的输出电流增强来证明该操作，这表明电子-电子散射可以支配纳米尺度MOS器件中的电子输运，并增加其有效驱动能力。
Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their momentum to the phonon bath. Here, we propose the Si electron-aspirator, a nanometer-scaled MOS device with a T-shaped branch, to go beyond this limit. The device utilizes the hydrodynamic nature of electrons due to the electron–electron scattering, by which the injected hot electrons transfer their momentum to cold electrons before they relax with the phonon bath. This momentum transfer induces an electron flow from the grounded side terminal without additional power sources. The operation is demonstrated by observing the output-current enhancement by a factor of about 3 at 8 K, which reveals that the electron–electron scattering can govern the electron transport in nanometer-scaled MOS devices, and increase their effective drivability.