High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition
High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition
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氧离子束辅助沉积室温制备高质量氧化铟锡薄膜
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
M. Kiuchi
中科院分区：
文献类型：
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作者：
Chang Liu;T. Matsutani;N. Yamamoto;M. Kiuchi
在室温下制备非常光滑、高质量的ITO薄膜是发展有机电致发光器件的关键问题之一。将ECR源产生的低能氧离子反应辐照引入到真空电子束蒸发ITO薄膜的制备中，具有很好的应用前景。通过X射线衍射、原子力显微镜、霍尔效应和光学透过率测量，表征了生长速率和薄膜厚度对结构、电学和光学性能的影响。在室温下获得了非常光滑的表面，其粗糙度（rms）仅为0.6 nm，比其他制备方法小近一个数量级，电阻率低至7.0 × 10−4 Ω cm，在波长550 nm处（包括SiO2衬底）的光学透过率高达85%。在室温下可以很容易地获得晶体结构，它只取决于沉积的ITO膜的厚度。
One of the key problems to develop organic electroluminescence devices is related to the fabrication of very smooth, high-quality ITO layers at room temperature. It is very promising to incorporate the reactive irradiation of low-energy oxygen ions produced from an ECR source into the deposition of ITO film by electron-beam evaporation in vacuum. The influences of growth rate and film thickness on the structural, electrical and optical properties were characterized by X-ray diffraction, atomic-force microscopy, Hall effect and optical transmittance measurements. A very smooth surface of only 0.6 nm roughness (rms), almost one order of magnitude smaller than those obtained using other preparation methods, low resistivity of 7.0 × 10−4 Ω cm, high optical transmittance of 85% at wavelength 550 nm (including SiO2 substrate) have been achieved at room temperature. Crystalline structure, which depends only on the thickness of the deposited ITO films, could be easily obtained at room temperature.