Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation.
Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation.
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DOI:
10.1364/oe.26.034580
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发表时间:
2018-07
期刊:
影响因子:
3.8
通讯作者:
H. Zwickel;J. Kemal;C. Kieninger;Y. Kutuvantavida;J. Rittershofer;M. Lauermann;W. Freude;S. Randel;C. Koos
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文献类型:
--
作者:
H. Zwickel;J. Kemal;C. Kieninger;Y. Kutuvantavida;J. Rittershofer;M. Lauermann;W. Freude;S. Randel;C. Koos
Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution Al2O3 printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shift-keying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitude-modulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments.