Micro thermal shear stress sensor with and without cavity underneath
Micro thermal shear stress sensor with and without cavity underneath
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DOI：
10.1109/imtc.1995.515123
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发表时间：
1995-04
期刊：
影响因子：
--
通讯作者：
Jin-Biao Huang;Chih-Ming Ho;S. Tung;Chang Liu;Y. Tai
中科院分区：
文献类型：
--
作者：
Jin-Biao Huang;Chih-Ming Ho;S. Tung;Chang Liu;Y. Tai
Micro hot-film shear-stress sensors have been designed and fabricated by surface micromachining technology compatible with IC technology. A poly-silicon strip, 2 µm x 80 µm, is deposited on the top of a thin silicon nitride film and functions as the sensor element. By using sacrificial-layer technique, a cavity (vacuum chamber), 200 x 200 x 2 µm^3, is placed between the silicon nitride film and silicon substrate. This cavity significantly decreases the heat loss to the substrate. For comparison purposes, a sensor structure without a cavity has also been designed and fabricated on the same chip. Theoretical analyses for the two vertical structures with and without a cavity show that the former has a lower frequency response and higher sensitivity than the latter. When the sensor is operated in constant temperature mode, the cut-off frequencies can reach 130 k-Hz and 9 k-Hz respectively for the sensors without and with cavities.
