Atomic Arrangement at the AlN/Si(110) Interface
Atomic Arrangement at the AlN/Si(110) Interface
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DOI：
10.1143/apex.1.061104
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发表时间：
2003-07
影响因子：
2.3
通讯作者：
O. Contreras;F. Ruiz-Zepeda;A. Dadgar;A. Krost;F. Ponce
中科院分区：
文献类型：
--
作者：
O. Contreras;F. Ruiz-Zepeda;A. Dadgar;A. Krost;F. Ponce
采用金属有机物气相外延法在Si（110）衬底上生长了GaN，并在其上形成了AlN低温成核层。用高分辨透射电子显微镜研究了AlN/衬底界面的原子排列。沿着AlN/Si和AlN/Si投影所取的AlN/Si界面的晶格图像显示出突变的结晶界面。在（1100）AlN和（001）Si面之间观察到高度共格的外延关系。考虑到化学配位、晶格失配和净电荷平衡，分析了AlN/Si界面处的原子键合构型。提出了界面键合的结构模型。
GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AlN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si interface taken along the AlN∥Si and AlN∥Si projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between (1100)AlN and (001)Si planes is observed. The atomic bonding configuration at the AlN/Si interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.