Mechanism of electrical conduction of Mn-doped β-FeSi2
Mechanism of electrical conduction of Mn-doped β-FeSi2
复制标题
Mn掺杂β-FeSi2的导电机理
DOI：
10.1063/1.370753
复制
发表时间：
1999
影响因子：
3.2
通讯作者：
H. Kido
中科院分区：
文献类型：
--
作者：
J. Tani;H. Kido
为了阐明掺锰β-FeSi 2（Fe 1-xMnxSi 2）的导电机制，在80 ~ 300 K温度范围内测量了Fe 1-xMnxSi 2（0.01 ≤ x ≤ 0.10）的霍尔效应和电阻率。在300 K时，Fe 1 − xMnxSi 2的空穴浓度范围为8.9×1017 cm−3（x=0.01）至1.1×1019 cm−3（x=0.10），几乎与Mn掺杂浓度（x）成正比。 Fe 1 − xMnxSi 2的电阻率随温度的变化在高温下呈S型衰减曲线。它的结论是，这种形状的结果从急剧下降的流动性随着温度的升高。我们提出的实验证据，解释了在高温下的杂质散射机制的Fe 1 − xMnxSi 2的导电性。
In order to clarify the mechanism of electrical conduction of Mn-doped β-FeSi2 (Fe1−xMnxSi2), the Hall effect and electrical resistivity of Fe1−xMnxSi2 (0.01≦x≦0.10) have been measured in the temperature range between 80 and 300 K. The hole concentration of Fe1−xMnxSi2 at 300 K ranges from 8.9×1017 cm−3 for x=0.01 to 1.1×1019 cm−3 for x=0.10, which is almost proportional to the Mn doping concentration (x). The temperature dependence of electrical resistivity of Fe1−xMnxSi2 shows an S-like decay curve at high temperatures. It is concluded that this shape results from the drastic decrease of the mobility with increasing temperature. We present experimental evidence that explains the electrical conduction of Fe1−xMnxSi2 at high temperatures by the impurity scattering mechanism.