Enhancement factor in the emission intensities excited by radiofrequency-powered glow discharge plasma associated with bias-current introduction
Enhancement factor in the emission intensities excited by radiofrequency-powered glow discharge plasma associated with bias-current introduction
复制标题
与偏置电流引入相关的射频驱动辉光放电等离子体激发的发射强度的增强因子
DOI：
10.2355/isijinternational.41.1488
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发表时间：
2001
影响因子：
1.8
通讯作者：
Hideyuki Matsuta
中科院分区：
文献类型：
--
作者：
K. Wagatsuma;Hideyuki Matsuta
在射频辉光放电等离子体中引入直流偏置电流导致特定发射线强度的增强。激发能为3 ~ 4 eV的原子发射谱线，通过传导20 ~ 30 mA的偏置电流，通常能增强10 ~ 20倍。增强因子在很大程度上取决于等离子体气体的压力和射频施加功率。激发能约为5.7 eV的原子发射谱线强度明显提高，其增强因子超过50。然而，无论等离子体条件如何，激发能大于7 eV的发射线几乎没有增加。
The introduction of a d.c. bias current to an r.f. glow discharge plasma led to enhancement in the intensities of particular emission lines. Atomic emission lines having the excitation energy of 3–4 eV were commonly enhanced 10–20 times by conducting the bias current of 20–30 mA. The enhancement factor strongly depended upon both the pressure of the plasma gas and the r.f. applied power. The intensities of atomic emission lines having the excitation energy of c.a. 5.7 eV were much more elevated and their enhancement factors exceeded 50. However, little increases for emission lines having the excitation energy more than 7 eV were observed regardless of the plasma conditions.