Diffusion of Ge below the Si(100) surface: theory and experiment
Diffusion of Ge below the Si(100) surface: theory and experiment
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DOI：
10.1103/physrevlett.84.2441
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发表时间：
2000-03
影响因子：
8.6
通讯作者：
Uberuaga;Leskovar;Smith;Jónsson;Olmstead
中科院分区：
文献类型：
--
作者：
Uberuaga;Leskovar;Smith;Jónsson;Olmstead
我们研究了Ge在Si（100）亚表面层中的扩散。俄歇电子衍射测量表明，在低至500摄氏度的温度下，亚单层生长后，第四层中的Ge。密度泛函理论预测的平衡Ge亚表面分布是一致的测量。我们确定了一个令人惊讶的低能量途径，导致低间隙形成能量在第三和第四层。掺杂显著影响形成能，表明n型掺杂可能导致更尖锐的Si/Ge界面。
We have studied diffusion of Ge into subsurface layers of Si(100). Auger electron diffraction measurements show Ge in the fourth layer after submonolayer growth at temperatures as low as 500 degrees C. Density functional theory predictions of equilibrium Ge subsurface distributions are consistent with the measurements. We identify a surprisingly low energy pathway resulting from low interstitial formation energy in the third and fourth layers. Doping significantly affects the formation energy, suggesting that n-type doping may lead to sharper Si/Ge interfaces.