Constant‐capacitance DLTS measurement of defect‐density profiles in semiconductors
Constant‐capacitance DLTS measurement of defect‐density profiles in semiconductors
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DOI：
10.1063/1.326546
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发表时间：
1979-07
影响因子：
3.2
通讯作者：
N. Johnson;D. Bartelink;R. Gold;J. Gibbons
中科院分区：
文献类型：
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作者：
N. Johnson;D. Bartelink;R. Gold;J. Gibbons
提出了一种分析方法，用于从在恒定电容模式下进行的深能级光谱测量中获得半导体中电子缺陷的空间深度分布。结合Lefevre和Schulz提出的双相关技术，新方法为测量缺陷轮廓提供了显著优势。深能级瞬态谱（DLTS）以传统的电容瞬态模式或恒定电容模式进行，提供半导体带隙中缺陷态的能级。双相关DLTS技术（DDLTS）是用来定义一个狭窄的空间观察窗口的缺陷轮廓。然而，在电容瞬态数据的DDLTS分析中，需要特定的近似来处理充电脉冲瞬态响应期间半导体耗尽宽度随时间的变化。在恒定电容模式下，耗尽宽度通过动态地改变施加的电压来保持恒定。
An analysis is presented for obtaining spatial depth profiles of electronic defects in semiconductors from deep‐level spectroscopic measurements performed in the constant‐capacitance mode. Combined with the double‐correlation technique proposed by Lefevre and Schulz, the new method offers significant advantages for measuring defect profiles. Deep‐level transient spectroscopy (DLTS), performed in either the conventional capacitance‐transient mode or the constant‐capacitance mode, provides the energy levels of defect states in the semiconductor band gap. The double correlation DLTS technique (DDLTS) is used to define a narrow spatial observation window for defect profiling. However, in the DDLTS analysis of capacitance‐transient data, specific approximations are required to deal with the change with time of the semiconductor depletion width during the transient response to a charging pulse. In the constant‐capacitance mode, the depletion width is held constant by dynamically varying the applied voltage duri...