Voltages on silicon microstrip detectors in high radiation fields
Voltages on silicon microstrip detectors in high radiation fields
复制标题
高辐射场中硅微带探测器上的电压
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
M. Wilson
中科院分区：
文献类型：
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作者：
T. Dubbs;M. Harms;H. Sadrozinski;A. Seiden;M. Wilson
研究了高辐射场下硅微带探测器上交流耦合读出条与硅条注入之间的电压关系。电离辐射由不同强度的红外激光提供，产生的电离模式模仿了最小电离粒子流产生的电离模式。在高激光强度下，实现了检测器内的操作电场的完全击穿，并研究了其作为激光强度和连接的电路元件的函数。有人发现，对于单面硅微带检测器，与n型体，n型硅植入带，和p型背板，读出带和硅植入物之间的电压差可以通过使用背板和偏置电源之间的大电阻，和背板和接地之间的小电容器，最小化。
The voltage between the AC-coupled readout strips and the silicon strip implants on a silicon microstrip detector in a high radiation field was investigated. The ionizing radiation was supplied by infrared lasers of varying intensity, creating ionization patterns that mimic those created by a flux of minimum ionizing particles. At high laser intensities, a complete breakdown of the operational electric field within the detector was achieved and studied as a function of laser intensity and connected circuit components. It was discovered that for a single-sided silicon microstrip detector, with n-type bulk, n-type silicon implant strips, and a p-type backplane, the voltage difference between the readout strips and the silicon implants could be minimized by using a large resistor between the backplane and the bias supply, and a small capacitor between the backplane and ground.