Electron energy-loss spectrum imaging of high-k dielectric stacks
Electron energy-loss spectrum imaging of high-k dielectric stacks
复制标题
高 k 电介质叠层的电子能量损失谱成像
DOI：
10.1063/1.2163255
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发表时间：
2006
影响因子：
4
通讯作者：
D. McComb
中科院分区：
文献类型：
--
作者：
M. Mackenzie;A. Craven;D. A. Hamilton;D. McComb
光谱成像结合电子能量损失光谱是一种强大的技术，可用于在亚纳米尺度上检查材料的结构，化学和电子特性。我们已经将这种技术应用于高k电介质叠层的调查和报告从HfO2 scinHfSiO堆叠在Si上获得的结果。结果提供了深入了解的空间分布的HfO2和SiOx相，从亚稳态的“HfSiO”的分解。观察到一些HfO2渗透到多晶硅栅电极材料中。
Spectrum imaging combined with electron energy-loss spectroscopy is a powerful technique that can be used to examine the structural, chemical and electronic properties of materials on a subnanometer scale. We have applied this technique to investigations of high-k dielectric stacks and report results obtained from a HfO2∕HfSiO stack on Si. The results provide insight into the spatial distribution of the HfO2 and SiOx phases that result from decomposition of metastable “HfSiO.” Some of the HfO2 is observed to penetrate into the poly-Si gate electrode material.