Analysis of Trap State Dynamics of Single CdSe/ZnS Quantum Dots on an Indium Tin Oxide Thin Film with Applying External Electric Field
Analysis of Trap State Dynamics of Single CdSe/ZnS Quantum Dots on an Indium Tin Oxide Thin Film with Applying External Electric Field
复制标题
外加电场下氧化铟锡薄膜上单个 CdSe/ZnS 量子点的陷阱态动力学分析
DOI：
10.1021/jp306408s
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发表时间：
2013
期刊：
影响因子：
3.7
通讯作者：
Keiji Sasaki
中科院分区：
文献类型：
--
作者：
Takashi Chiba;Jun Qi;Hideki Fujiwara;Keiji Sasaki
为了阐明陷阱态对氧化铟锡（ITO）薄膜上单个CdSe/ZnS量子点发射动力学的影响，我们采用光子互探测时间分析方法测量了单个量子点的陷阱态寿命。随着两个分离的ITO衬底之间外加电场的变化，我们发现闪烁行为明显改变，从陷阱状态的回收率也发生了变化；另一方面，激发态寿命几乎保持不变。结果表明，除了激发态动力学外，阱态动力学对闪烁行为也起着重要作用。
To clarify the influence of trap states on the emission dynamics of single CdSe/ZnS quantum dots on an indium tin oxide (ITO) thin film, we measured the trap state lifetimes of single quantum dots by a photon interdetection time analysis method. As the applied electric field between two separated ITO substrates was changed, we found that blinking behaviors were clearly modified, and the recovery rates from trap states were also changed; on the other hand, the excited state lifetime remained almost unchanged. From the results, we concluded that not only the excited state dynamics but also the trap state dynamics would play an important role for the blinking behavior.