Perpendicular anisotropy of MBE-grown FePt granular films
Perpendicular anisotropy of MBE-grown FePt granular films
复制标题
DOI：
10.1016/j.jmmm.2006.10.961
复制
发表时间：
2005-04
影响因子：
2.1
通讯作者：
T. Itoh;T. Kato;S. Iwata;S. Tsunashima
中科院分区：
文献类型：
--
作者：
T. Itoh;T. Kato;S. Iwata;S. Tsunashima
通过对FePt（0.5nm）/Ag（0.2nm）双层膜的6次重复沉积和退火，在MgO（001）衬底上制备了（001）取向的颗粒状FePt-Ag（4.2nm）薄膜。用于获得垂直磁化膜的退火温度为约200°C，这显著低于不具有Ag层的膜和在没有重复沉积和退火工艺的情况下制备的膜的退火温度。在300°C退火的薄膜显示出1.2× 107 erg/cm ~ 3的垂直各向异性
Fabrication of (001) oriented granular FePt–Ag (4.2nm) films on MgO (001) substrates was achieved by means of repeated 6 times deposition and annealing of FePt(0.5nm)/Ag(0.2nm) bilayers. The annealing temperature for obtaining a perpendicular magnetized film was about 200°C, which is considerably lower than that of films without Ag layers and films made without the repeated deposition and annealing process. The film annealed at 300°C exhibits a large perpendicular anisotropy of 1.2×107erg/cm3