Devices and circuits in CMOS for THz applications
Devices and circuits in CMOS for THz applications
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用于太赫兹应用的 CMOS 器件和电路
DOI：
10.1109/iedm.2016.7838509
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
B.
中科院分区：
文献类型：
--
作者：
Z. Ahmad;W. Choi;N. Sharma;J. Zhang;Q. Zhong;D. Kim;Z. Chen;Y. Zhang;R. Han;D. Shim;S. Sankaran;E. Seok;C. Cao;C. Mao;R. Schueler;I. Medvedev;David John Lary;Hyun;P. Raskin;F. Delucia;J. P. McMillan;C. Neese;I. Kim;I. Momson;P. Yellswarapu;S. Dong;B.
CMOS技术和电路的最新进展使其成为实现有能力和负担得起的THz系统的替代方案。通过工艺和电路优化，应该可以在CMOS中产生有用的功率并相干检测频率超过1THz的信号，以及非相干检测40THz的信号。
Recent advances of CMOS technology and circuits have made it an alternative for realizing capable and affordable THz systems. With process and circuit optimization, it should be possible to generate useful power and coherently detect signals at frequencies beyond 1THz, and incoherently detect signals at 40THz in CMOS.