Step flow at homoepitaxy of Si(111) with (7×7)↔(1×1) superstructure phase transition
Step flow at homoepitaxy of Si(111) with (7×7)↔(1×1) superstructure phase transition
复制标题
Si(111) 同质外延的阶跃流 (7×7)↔(1×1) 超结构相变
DOI：
10.1002/pssb.2221730233
复制
发表时间：
1992
影响因子：
1.6
通讯作者：
A. V. Dvrechenskii
中科院分区：
文献类型：
--
作者：
V. Zinovyev;V. Balandin;L. Aleksandrov;A. V. Dvrechenskii
C Si晶体的相变温度沿着台阶[1，41。（7 x 7）到（1 x 1）重建需要吸收An = 4 x原子/cm 2 [2]。在T> 830”C时，梯田具有（1 x 1）上层建筑（图lc）。采用坐标变换x+ x-Vt，在移动坐标系下，用吸附原子扩散方程和边界条件导出了Si（11 1）同质外延生长的稳态过程
C Si crystal the phase transition temperature along the terrace [l, 41.(7 x 7) to (1 x 1) reconstruction needs An,= 4 x atoms/cm2 to be absorbed [2]. At T> 830" C the terraces have (1 x 1) superstructure (Fig. lc). The steady state process of the homoepitaxial Si (ll1) growth, using a moving reference frame by employing the coordinate transformation x+ x-Vt, can be derived by the adatom diffusion equation with the boundary conditions