Linearity and low-noise performance of SOI MOSFETs for RF applications
Linearity and low-noise performance of SOI MOSFETs for RF applications
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适用于 RF 应用的 SOI MOSFET 的线性度和低噪声性能
DOI：
10.1109/16.998598
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发表时间：
2002
影响因子：
3.1
通讯作者：
M. Fukurni
中科院分区：
文献类型：
--
作者：
A. Adan;T. Yoshimasu;S. Shitara;N. Tanba;M. Fukurni
分析了在GHz频率下RF应用的重要MOSFET参数：a）过渡频率，B）噪声系数和c）线性度，并将其与衬底类型相关联。这项工作表明，在不改变工艺的情况下，高电阻率绝缘体上硅（高/spl rho/ SOI）衬底可以成功地提高片上电感和全耗尽（FD）-SOI器件的RF性能，降低衬底损耗和寄生效应。SOI的低击穿电压和“扭结”效应的线性度的限制，解决了明智的器件和电路设计。设备优化的标准。在2.5 GHz时，在高spl ρ/ SOI衬底上的0.25 /spl μ/m FD-SOI低噪声放大器（LNA）的NF = 1.7 dB，在L和S波段的应用中获得了最低的噪声系数。
The MOSFET parameters important for RF application at GHz frequencies: a) transition frequency, b) noise figure, and c) linearity are analyzed and correlated with substrate type. This work demonstrates that, without process changes, high-resistivity silicon-on-insulator (high-/spl rho/ SOI) substrates can successfully enhance the RF performance of on-chip inductors and fully depleted (FD)-SOI devices in terms of reducing substrate losses and parasitics. The linearity limitations of the SOI low-breakdown voltage and "kink" effect are addressed by judicious device and circuit design. Criteria for device optimization are derived. A NF = 1.7 dB at 2.5 GHz for a 0.25 /spl mu/m FD-SOI low-noise amplifier (LNA) on high-/spl rho/ SOI substrate obtained the lowest noise figure for applications in the L and S-bands.