Room-temperature bonding of GaN and diamond via a SiC layer
Room-temperature bonding of GaN and diamond via a SiC layer
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DOI：
10.1080/26941112.2022.2145508
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发表时间：
2022-12
期刊：
影响因子：
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通讯作者：
Ayaka Kobayashi;Hazuki Tomiyama;Y. Ohno;Y. Shimizu;Y. Nagai;N. Shigekawa;Jianbo Liang
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文献类型：
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作者：
Ayaka Kobayashi;Hazuki Tomiyama;Y. Ohno;Y. Shimizu;Y. Nagai;N. Shigekawa;Jianbo Liang
gan -on-金刚石结构是提高gan基功率器件散热效率的最有希望的候选结构。氮化镓与金刚石的室温键合是制备这种结构的有效方法。然而，将金刚石抛光到0.4 nm以下的平均粗糙度（Ra）是极其困难的，特别是对于聚晶金刚石。在这项工作中，通过表面激活键合（SAB）方法，成功地实现了氮化镓和表面粗糙的金刚石与SiC层的室温键合。金刚石表面的初始Ra值为0.768 nm，沉积SiC层后Ra值降至0.365 nm。在GaN/金刚石界面处形成的SiC层为非晶层，厚度约为7 nm。在1000℃退火后，非晶SiC层变成多晶，厚度增加到约12 nm。这些结果表明，在金刚石表面沉积SiC层可以有效地降低金刚石表面的粗糙度，从而促进室温键合。
Abstract A GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However, it is extremely difficult to polish diamond to an average roughness (Ra) below 0.4 nm, especially for polycrystalline diamond. In this work, Room-temperature bonding of GaN and rough-surfaced diamond with a SiC layer was successfully achieved by a surface-activated bonding (SAB) method. The diamond surface’s initial Ra value was 0.768 nm, but after deposition of the SiC layer, the Ra decreased to 0.365 nm. The SiC layer formed at the as-bonded GaN/diamond interface was amorphous, with a thickness of about 7 nm. After annealing at 1000-°C, the amorphous SiC layer became polycrystalline, and its thickness increased to approximately 12 nm. These results indicate that the deposition of a SiC layer on diamond can efficiently lower the diamond surface’s roughness and thus facilitate room-temperature bonding.