Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor.
Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor.
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DOI:
10.1038/ncomms15053
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发表时间:
2017-05-22
影响因子:
16.6
通讯作者:
Gerardot BD
中科院分区:
文献类型:
--
作者:
Branny A;Kumar S;Proux R;Gerardot BD
An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. The emergence of quantum emitters in 2D materials has led to the quest for methods and designs enabling their controllable spatial positioning. Here, the authors use strain engineering to fabricate a deterministic array of quantum emitters in WSe2 with nanometre positioning accuracy.