Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor.

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor.
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DOI:
10.1038/ncomms15053
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发表时间:
2017-05-22
影响因子:
16.6
通讯作者:
Gerardot BD
Gerardot BD
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Branny A;Kumar S;Proux R;Gerardot BD

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量子光子学的一个突出挑战是可扩展性,这需要以确定性的方式定位单个量子发射器。在已建立的平台中,包括金刚石和自组装量子点中的缺陷,已经取得了站点定位进展,尽管通常具有折衷的相干性和光学质量。层状过渡金属二硫属化物半导体中单量子发射体的出现为构建可扩展的量子体系结构提供了新的机会。在这里,使用纳米级应变工程,我们确定性地实现了一个二维晶格的量子发射器在原子级薄的半导体。我们在单层和双层WSe 2中产生点状应变扰动,其局部修改带隙,导致激子向隔离的应变调谐量子发射器有效地漏斗化,所述量子发射器表现出高纯度的单光子发射。我们实现了接近统一的发射体创建概率和120±32 nm的平均定位精度,这可以通过进一步优化纳米柱尺寸来改进。量子发射器在2D材料中的出现导致了对实现其可控空间定位的方法和设计的追求。在这里,作者使用应变工程来制造具有纳米定位精度的WSe2量子发射器的确定性阵列。
An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. The emergence of quantum emitters in 2D materials has led to the quest for methods and designs enabling their controllable spatial positioning. Here, the authors use strain engineering to fabricate a deterministic array of quantum emitters in WSe2 with nanometre positioning accuracy.