Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature
Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature
复制标题
不同溅射温度磁控溅射生长定向良好的 InN 纳米点
DOI：
10.1116/1.5028165
复制
发表时间：
2018-07-01
影响因子：
1.4
通讯作者：
Yang, Fan
中科院分区：
文献类型：
--
作者：
Wang, Hui;Zhao, Yang;Yang, Fan
本文采用射频磁控溅射法在蓝宝石衬底上制备了氮化铟纳米点。结构和形貌的结果表明，生长的InN薄膜具有c轴择优取向生长和良好的取向InN纳米点的形态。X射线光电子能谱结果表明，In/N的原子比约为1：1.06，In原子仅以InN化合物的形式存在，而不是以In 2 O3的形式存在。随着溅射温度的升高，InN纳米点的能带隙在1.68到2.01 eV之间变化。利用霍尔效应对InN纳米点的电学性质进行了详细的讨论。本文采用射频磁控溅射法在蓝宝石衬底上沉积了不同溅射温度下的InN纳米点。结构和形貌的结果表明，生长的InN薄膜具有c轴择优取向生长和良好的取向InN纳米点的形态。X射线光电子能谱结果表明，In/N的原子比约为1：1.06，In原子仅以InN化合物的形式存在，而不是以In 2 O3的形式存在。随着溅射温度的升高，InN纳米点的能带隙从1.68到2.01 eV变化。此外，InN纳米点的电学性质也进行了详细讨论，使用霍尔效应的结果。
Herein, indium nitride nanodots were deposited on sapphire substrates by radio-frequency magnetron sputtering under different sputtering temperatures. The structure and morphology results revealed that the as-grown InN films exhibited a c-axis preferred oriented growth and a well-oriented InN nanodot morphology. The x-ray photoelectron spectra results indicated that the In atoms existed only as combined InN and not in the form of In2O3 in consequence of the fact that the atomic ratio of In/N was approximately 1:1.06. The energy bandgap of the InN nanodots varied from 1.68 to 2.01 eV as the sputtering temperature increased. Moreover, the electrical properties of the InN nanodots were also discussed in detail using Hall effect results.Herein, indium nitride nanodots were deposited on sapphire substrates by radio-frequency magnetron sputtering under different sputtering temperatures. The structure and morphology results revealed that the as-grown InN films exhibited a c-axis preferred oriented growth and a well-oriented InN nanodot morphology. The x-ray photoelectron spectra results indicated that the In atoms existed only as combined InN and not in the form of In2O3 in consequence of the fact that the atomic ratio of In/N was approximately 1:1.06. The energy bandgap of the InN nanodots varied from 1.68 to 2.01 eV as the sputtering temperature increased. Moreover, the electrical properties of the InN nanodots were also discussed in detail using Hall effect results.