Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films
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应变和松弛外延 Ge1-xSnx 薄膜中 Sn 局域环境的扩展 X 射线吸收精细结构研究
DOI：
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
K. Temst
中科院分区：
文献类型：
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作者：
F. Gencarelli;D. Grandjean;Y. Shimura;B. Vincent;D. Banerjee;A. Vantomme;W. Vandervorst;R. Loo;M. Heyns;K. Temst
我们提出了一个扩展的X射线吸收精细结构的Sn原子在应变和弛豫Ge 1 −xSnx层的局部环境的调查与不同的成分。我们发现，在这些Ge 1 −xSnx层中引入Sn原子的优选构型是α-Sn缺陷，每个Sn原子以经典的四面体构型共价键合到四个Ge原子上。Sn金属化物、Sn-分裂空位络合物或Sn二聚体（如果存在的话）预计不涉及超过总Sn原子的2.5%。这一发现，沿着随着Sn浓度的增加，Ge 1 −xSnx层中中心Sn原子周围的第二原子壳层中的Sn原子相对增加，表明所研究的材料是均匀的无规替位合金。在测量精度范围内，Ge 1 −xSnx层的应变弛豫程度对Sn原子周围的局部原子没有显著影响。最后，给出了计算的拓扑刚度参数。
We present an extended X-ray absorption fine structure investigation of the local environment of Sn atoms in strained and relaxed Ge1−xSnx layers with different compositions. We show that the preferred configuration for the incorporation of Sn atoms in these Ge1−xSnx layers is that of a α-Sn defect, with each Sn atom covalently bonded to four Ge atoms in a classic tetrahedral configuration. Sn interstitials, Sn-split vacancy complexes, or Sn dimers, if present at all, are not expected to involve more than 2.5% of the total Sn atoms. This finding, along with a relative increase of Sn atoms in the second atomic shell around a central Sn atom in Ge1−xSnx layers with increasing Sn concentrations, suggests that the investigated materials are homogeneous random substitutional alloys. Within the accuracy of the measurements, the degree of strain relaxation of the Ge1−xSnx layers does not have a significant impact on the local atomic surrounding of the Sn atoms. Finally, the calculated topological rigidity parame...
锗中的锡空位配合物
影响因子：
3.2
作者：
Markevich V
通讯作者：
Markevich V