Working memory maintenance contributes to long-term memory formation:: Evidence from slow event-related brain potentials
Working memory maintenance contributes to long-term memory formation:: Evidence from slow event-related brain potentials
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DOI：
10.3758/cabn.7.3.212
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发表时间：
2007-09-01
影响因子：
2.9
通讯作者：
Roesler, Frank
中科院分区：
文献类型：
--
作者：
Khader, Patrick;Ranganath, Charan;Roesler, Frank
关于工作记忆（WM）维持和长时记忆（LTM）形成之间的关系，行为研究产生了相互矛盾的观点。我们使用慢事件相关脑电位来研究WM维持期间的神经活动与成功的LTM形成相关的程度。参与者用物体和字母串执行WM任务，然后进行惊喜LTM测试。慢电位被发现是更负的顶叶和枕叶皮层的对象和左额叶皮层的字母串在WM维护。在每一个类别中，他们都对随后成功记住的项目进行了增强。这些影响在地形上是不同的，在WM维持期间显示最大负性的电极处的影响最大。总之，这些结果是强烈一致的想法，WM维护有助于LTM的形成，这可能是通过加强刺激特定的皮层记忆痕迹。
Behavioral research has led to conflicting views regarding the relationship between working memory (WM) maintenance and long-term memory (LTM) formation. We used slow event-related brain potentials to investigate the degree to which neural activity during WM maintenance is associated with successful LTM formation. Participants performed a WM task with objects and letter strings, followed by a surprise LTM test. Slow potentials were found to be more negative over the parietal and occipital cortex for objects and over the left frontal cortex for letter strings during WM maintenance. Within each category, they were enhanced for items that were subsequently successfully remembered. These effects were topographically distinct, with maximum effects at those electrodes that showed the maximum negativity during WM maintenance in general. Together, these results are strongly consistent with the ideas that WM maintenance contributes to LTM formation and that this may occur through strengthening of stimulus-specific cortical memory traces.