A Technology for Reducing Flicker Noise for ULSI Applications
A Technology for Reducing Flicker Noise for ULSI Applications
复制标题
一种降低 ULSI 应用闪烁噪声的技术
DOI：
10.1143/jjap.42.2106
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
Koutarou Tanaka;Kazufumi Watanabe;Hideaki Ishino;S. Sugawa;A. Teramoto;M. Hirayama;T. Ohmi
研究表明，在n沟道金属氧化物半导体场效应晶体管（n-MOSFET）中，形成原子尺度的平坦化Si/SiO2界面，可以有效地降低闪烁噪声。实现了Si/SiO2界面的原子级平坦化，采用HF/HCl湿法刻蚀工艺获得原子级平坦化的硅表面，然后在400°C下利用Kr/O2混合高密度微波激发等离子体中产生的自由基对硅表面进行氧化。应用这些技术，在Si/SiO2界面的陷阱密度显着降低，因为表面粗糙度最小化和闪烁噪声显着减少相比，与传统的工艺。
It is demonstrated that the formation of the atomic scale flattened Si/SiO2 interface is effective in reducing the Flicker noise in n-channel metal oxide semiconductor field effect transistors (n-MOSFETs). The atomic scale flattened Si/SiO2 interface is realized, the atomic scale flattened silicon surface is obtained by the HF/HCl wet-etching process, and then the silicon surface is oxidized by radicals generated in Kr/O2 mixed high-density microwave-excited plasma at 400°C. Applying these techniques, the trap density at the Si/SiO2 interface is markedly reduced since the surface roughness is minimized and Flicker noise is markedly reduced as compared with the conventional process.