Reactive ion etching of glasses: Composition dependence
Reactive ion etching of glasses: Composition dependence
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DOI：
10.1016/s0168-583x(03)00517-2
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发表时间：
2003-05-01
影响因子：
1.3
通讯作者：
Pantano, CG
中科院分区：
文献类型：
--
作者：
Metwalli, E;Pantano, CG
研究了在CF_4/CHF_3和Ar等离子体中对硅酸盐和磷酸盐玻璃的磁增强反应离子刻蚀（MERIE）。通过轮廓测定法测量蚀刻深度以获得蚀刻速率作为等离子体功率、等离子体组成和玻璃组成的函数。结果发现，在氟碳等离子体中，玻璃的蚀刻速率随着玻璃中不易挥发的氧化物的浓度增加而降低。这些蚀刻速率被解释在离子增强的化学反应和物理溅射。用X射线光电子能谱（XPS）测定蚀刻表面的组成。在蚀刻的早期阶段期间观察到等离子体中的反应性（离子）物质与玻璃表面之间的高化学反应速率，这导致高挥发性物质（SiF 4和BF 3）的耗尽和低挥发性物质（AlF 3、BaF 2、NaF等）的积累。在较长的时间，玻璃表面达到稳定状态的组成（挥发性较低的物种）和随后的蚀刻是由物理溅射为主。(C)2003 Elsevier Science B. V.保留所有权利。
Magnetically enhanced reactive ion etching (MERIE) of silicate and phosphate glasses was examined in CF4/CHF3 and Ar plasmas. The etch depths were measured by profilometery to obtain etching rates as a function of plasma power, plasma composition and glass composition. It was found that in fluorocarbon plasmas, the etch rate of glasses decreases as the concentration of less-volatile oxides in the glass increases. These etching rates were interpreted in terms of ion-enhanced chemical reaction and physical sputtering. The compositions of the etched surfaces were determined with X-ray photoelectron spectroscopy (XPS). A high chemical reaction rate between the reactive (ion) species in the plasma and the glass surface was observed during the early stages of etching which lead to depletion of highly volatile species (SiF4 and BF3) and accumulation of less volatile species (AlF3, BaF2, NaF, etc.). At longer times, the glass surface reached a steady state composition (of the less volatile species) and subsequent etching was dominated by physical sputtering. (C) 2003 Elsevier Science B.V. All rights reserved.