Observing long-lived nonradiative electronic states in silicon-vacancy centers in diamond using optical multidimensional coherent spectroscopy (Conference Presentation)
Observing long-lived nonradiative electronic states in silicon-vacancy centers in diamond using optical multidimensional coherent spectroscopy (Conference Presentation)
复制标题
使用光学多维相干光谱观察金刚石硅空位中心的长寿命非辐射电子态（会议演示）
DOI：
10.1117/12.2510837
复制
发表时间：
--
期刊：
影响因子：
--
通讯作者：
S. T. Cundiff
中科院分区：
文献类型：
--
作者：
C. Smallwood;R. Ulbricht;M. W. Day;T. Schröder;K. M. Bates;T. M. Autry;G. Diederich;E. Bielejec;M. E. Siemens;S. T. Cundiff
钻石中的色心是钻石主晶格中的点缺陷，它以光学频率吸收和发射光。这些中心--特别是带负电荷的氮空位(NV)中心和硅空位(SIV-)中心--除了有助于钻石作为宝石那样具有惊人的视觉特征外，还为量子计算和量子信息处理提供了许多可能性。在这次演讲中，我将总结利用光学多维相干光谱(MDCS)技术表征金刚石中带负电荷的硅空位中心的最新进展。通过在高密度SIV中心样品中比较基于光致发光和基于外差探测的信号采集方案，我们选择性地识别了钻石中的一组长寿命和非辐射性的硅空位中心，其非均匀光谱展宽是更常见的光致发光观察到的辐射性硅空位中心态的40倍以上。对不均匀程度和总体样品特征的估计表明，应变很可能在这些非辐射状态的形成中发挥很大作用。这些发现为能够主动调节硅-空位中心系统中的辐射耦合程度提供了可能性，为新型量子光学设备提供了可能性。
Color centers in diamond are point defects within the diamond host lattice that absorb and emit light at optical frequencies. Besides contributing to the striking visual characteristics of "fancy colored" diamonds as gemstones, the centers--particularly the negatively charged nitrogen-vacancy (NV) center and silicon-vacancy (SiV-) center--offer a number of possibilities for quantum computation and quantum information processing. In this talk, I will summarize recent progress made in characterizing negatively charged silicon-vacancy centers in diamond using the technique of optical multidimensional coherent spectroscopy (MDCS). By comparing photoluminescence-based and heterodyne-detection based signal collection schemes in a high-density SiV- center sample, we have selectively identified a population of long-lived and nonradiative silicon-vacancy centers in diamond with more than 40 times as much inhomogeneous spectral broadening as the radiative silicon-vacancy center states that are more commonly observed using photoluminescence. Estimates of the degree of inhomogeneity and overall sample characteristics indicate that strain is likely to play a large role in the formation of these nonradiative states. The findings open possibilities for being able to actively tune the degree of radiative coupling in silicon-vacancy center systems, opening possibilities for new types of quantum-optical devices.