Halogen substituted tetraselenafulvalene derivatives
Halogen substituted tetraselenafulvalene derivatives
复制标题
卤素取代的四硒富瓦烯衍生物
DOI：
10.1016/s0379-6779(00)00814-6
复制
发表时间：
2001
期刊：
影响因子：
4.4
通讯作者：
T. Otsubo
中科院分区：
文献类型：
--
作者：
K. Takimiya;Yoshiro Kataoka;A. Morikami;Y. Aso;T. Otsubo
报道了二卤代和四卤代四硒富瓦烯（TSF）衍生物的合成及其电化学性质。该合成方法包括从容易获得的起始原料有效地形成卤素取代的1，3-二硒烯-2-硒酮。电化学结晶得到了几种自由基阳离子盐，其中二甲基二溴TSF的ClO 4盐在室温下电导率高达400 S cm-1，金属离子保留率约为100 S cm-1。九万
The synthesis and electrochemical properties of di-and tetra-halogenated tetraselenafulvalene (TSF) derivatives are presented. The synthetic method involves an efficient formation of halogen substituted 1, 3-diselenole-2-selones from readily available starting materials. Electrochemical crystallization afforded several radical cation salts, and, of them, the ClO 4 salt of the dimethyl-dibromo-TSF showed a high conductivity of 400 S cm-1 at room temperature and retained metallic down to ca. 90 K.