Improvement of single photon emission from InGaN QDs embedded in porous micropillars
Improvement of single photon emission from InGaN QDs embedded in porous micropillars
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DOI：
10.1063/1.5045843
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发表时间：
2018-09
影响因子：
4
通讯作者：
H. Springbett;J. Jarman;T. Zhu;M. Holmes;Y. Arakawa;R. Oliver
中科院分区：
文献类型：
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作者：
H. Springbett;J. Jarman;T. Zhu;M. Holmes;Y. Arakawa;R. Oliver
在许多InGaN/GaN单光子发射结构中，观察到背景发射对单光子流的显著污染。在这里，利用InGaN/GaN量子点纳入中孔分布布拉格反射器（DBR）内的微柱，我们展示了减少这种污染的方法。使用所得到的设备，进行自相关测量使用Hanbury布朗和Twiss设置，因此，我们报告了一个工作的量子点设备中的III族氮化物系统利用介孔DBR。当用较长波长和较低功率的激光激发时，未校正的g（2）（0）自相关值显示出显著改善。通过这种优化，我们报道了在没有任何形式的背景校正的情况下，蓝色发光InGaN/GaN量子点的g（2）（0）值为0.126 ± 0.003。在许多InGaN/GaN单光子发射结构中，观察到背景发射对单光子流的显著污染。在这里，利用InGaN/GaN量子点纳入中孔分布布拉格反射器（DBR）内的微柱，我们展示了减少这种污染的方法。使用所得到的设备，进行自相关测量使用Hanbury布朗和Twiss设置，因此，我们报告了一个工作的量子点设备中的III族氮化物系统利用介孔DBR。当用较长波长和较低功率的激光激发时，未校正的g（2）（0）自相关值显示出显著改善。通过这种优化，我们报告了蓝色发光InGaN/GaN量子点的g（2）（0）值为0.126 ± 0.003，而没有任何形式的背景校正。
In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g(2)(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g(2)(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form of background correction.In many InGaN/GaN single photon emitting structures, significant contamination of the single photon stream by background emission is observed. Here, utilizing InGaN/GaN quantum dots incorporated in mesoporous distributed Bragg reflectors (DBRs) within micropillars, we demonstrate methods for the reduction of this contamination. Using the resulting devices, autocorrelation measurements were performed using a Hanbury Brown and Twiss set-up, and thus, we report a working quantum dot device in the III-nitride system utilizing mesoporous DBRs. Uncorrected g(2)(0) autocorrelation values are shown to be significantly improved when excited with a laser at longer wavelengths and lower powers. Through this optimization, we report a g(2)(0) value from a blue-emitting InGaN/GaN quantum dot of 0.126 ± 0.003 without any form of background correction.