Quantum wirelike induced morphology in InGaAs wells grown on InyAl1−yAs tensile buffer layers over (100)InP vicinal surfaces
Quantum wirelike induced morphology in InGaAs wells grown on InyAl1−yAs tensile buffer layers over (100)InP vicinal surfaces
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(100)InP 邻接表面上的 InyAl1−yAs 拉伸缓冲层上生长的 InGaAs 井中的量子线状诱导形态
DOI：
10.1063/1.113950
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发表时间：
1995
影响因子：
4
通讯作者：
A. Christou
中科院分区：
文献类型：
--
作者：
F. Peiró;A. Cornet;J. Morante;A. Georgakilas;C. Wood;A. Christou
报道了通过分子束外延在 (100)InP 邻位表面生长的 InGaAs 单量子阱结构上量子线状形态的出现。透射电子显微镜的结果表明，衬底的错误取向驱动了与沿{133}或{122}平面取向的富In或富Al区域相关的横向对比度调制的发展，该调制在InAlAs拉伸缓冲层上开始并在整个结构中传播，从而引起InGaAs阱的各向异性波纹。相反，对于在精确 (100) 表面上生长的相同层，在 InAlAs/InP 界面处观察到失配位错网络。两种结构的比较表明，这种调制配置的发展显然是一种应力消除机制。
The appearance of quantum wirelike morphology on InGaAs single quantum well structures grown by molecular beam epitaxy on (100)InP vicinal surfaces is reported. The results of transmission electron microscopy reveal that the misorientation of the substrate drives the development of a lateral contrast modulation related to In‐rich or Al‐rich regions oriented along {133} or {122} planes that initiate on the InAlAs tensile buffer layer and propagate across the structure, giving rise to an anisotropic rippling of the InGaAs well. Conversely, a misfit dislocation network at the InAlAs/InP interface was observed for the same layers grown on exact (100) surface. A comparison of the two structures suggest that the development of such modulated configuration is apparently a strain relieving mechanism.