Electromigration effects upon the low-temperature Sn/Ni interfacial reactions
Electromigration effects upon the low-temperature Sn/Ni interfacial reactions
复制标题
电迁移对低温Sn/Ni界面反应的影响
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Sinn
中科院分区：
文献类型：
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作者：
Chih;Sinn
利用Sn/Ni/Sn夹层型反应电偶研究了在100 ℃通电和不通电情况下Sn/Ni界面反应。在100 ℃不通电情况下反应的电对中，Sn/Ni和Ni/Sn界面均形成Ni_3Sn_4相和亚稳态NiSn_3相。金相分析表明，亚稳态NiSn_3相在100 ℃时成核并生长。 NiSn_3相的生长速度远快于Ni_3Sn_4相的晶界。对于通过4×10^3 A/cm^2密度的电流的电偶，在两个界面处也发现了Ni_3Sn_4反应层。然而，仅在电子流方向与Ni扩散方向相同的Ni/Sn界面处发现了NiSn_3相，而在Sn/Ni界面处未发现NiSn_3相。发现在 Ni/Sn 界面处形成的 NiSn_3 相的成核和生长速度比没有电流通过的情况快得多。电迁移效应可能增强了Ni原子的运动，加速了NiSn_3相的成核和生长，而在Sn/Ni界面处，电子流和Ni扩散的方向相反，电迁移效应阻碍了Ni原子的运动并抑制了NiSn_3相的成核。
Sn/Ni interfacial reactions at 100 °C with and without the passage of electric currents were studied by using the Sn/Ni/Sn sandwich-type reaction couples The Ni_3Sn_4 and metastable NiSn_3 phases were formed at both the Sn/Ni and Ni/Sn interfaces in the couples reacted at 100 °C without the passing through of electric currents Metallographical analyses revealed that the metastable NiSn_3 phase nucleated and grew at the grain boundary, and the growth rate of the NiSn_3 phase was much faster than that of the Ni_3Sn_4 phase. For the couples with the passage of electric currents of 4 × 10^3 A/cm^2 density, the Ni_3Sn_4 reaction layers were found at both interfaces as well. However, the NiSn_3 phase was found only at the Ni/Sn interface where the directions of electron flow and Ni diffusion were the same, and the NiSn_3 phase was not found at the Sn/Ni interface. The NiSn_3 phase formed at the Ni/Sn interface was found to nucleate and grow much faster than those without the passage of electric currents. It is likely that the electromigration effect enhances the movement of Ni atoms and accelerates the nucleation and growth of the NiSn_3 phase while at the Sn/Ni interface, where the directions of electron flow and Ni diffusion are opposite, electromigration effects retard the movement of Ni atoms and inhibit the nucleation of the NiSn_3 phase.