Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition
Large Single Crystals of Graphene on Melted Copper Using Chemical Vapor Deposition
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DOI：
10.1021/nn3016629
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发表时间：
2012-06-01
期刊：
影响因子：
17.1
通讯作者：
Warner, Jamie H.
中科院分区：
文献类型：
--
作者：
Wu, Yimin A.;Fan, Ye;Warner, Jamie H.
提出了一种利用常压化学气相沉积（CVD）在熔融铜上合成大单晶石墨烯畴的简单方法。这是通过在高于铜的熔点（1090摄氏度）的温度下进行反应并使用钼或钨载体来防止铜的球化而不润湿来实现的。通过控制生长过程中氢的量，在连续膜内产生大于200 μ m的单层石墨烯的单个单晶域。在形成完整的膜之前停止生长揭示了在其取向上外延对准的石墨烯的各个六边形域。角分辨光电子能谱显示，生长在铜上的石墨烯表现出线性色散关系，没有掺杂的迹象。HRTEM和电子衍射揭示了单层石墨烯的均匀的高质量晶体原子结构。
A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 degrees C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 mu m are produced within a continuous film. Stopping growth before a complete film is formed reveals individual hexagonal domains of graphene that are epitaxially aligned in their orientation. Angular resolved photoemission spectroscopy is used to show that the graphene grown on copper exhibits a linear dispersion relationship and no sign of doping. HRTEM and electron diffraction reveal a uniform high quality crystalline atomic structure of monolayer graphene.