Critical thickness of equilibrium epitaxial thin films using finite element method
Critical thickness of equilibrium epitaxial thin films using finite element method
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DOI：
10.1063/1.1745115
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发表时间：
2004-06
影响因子：
3.2
通讯作者：
A. Subramaniam
中科院分区：
文献类型：
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作者：
A. Subramaniam
在生长超过临界厚度时，界面失配位错成核，并且这部分地弛豫了由于外延生长的薄膜中的晶格失配引起的应变。已经观察到，在金属薄膜中，能量的全局最小化可以解释实验确定的临界厚度值，并且这些被称为平衡薄膜。在这项工作中，使用相结合的有限元模拟的相干应变生长薄膜和简单的刃位错，位错成核的临界厚度的确定。刃型位错和生长的薄膜通过在模型的适当区域中馈送适当的无应力Eshelby失配应变来建模。计算了各种金属薄膜的临界厚度，并与标准理论和现有的实验结果进行了比较。
On growth beyond critical thickness, interfacial misfit dislocations nucleate, and this partially relaxes the strain due to lattice mismatch in epitaxially grown thin films. It has been observed that, in metallic thin films, global minimization of energy can explain the experimentally determined critical thickness values and these are referred to as equilibrium thin films. In this work, using a combination of finite element simulation of a coherently strained growing thin film and simple edge dislocation, the critical thickness for dislocation nucleation is determined. The edge dislocation and the growing thin film are modeled by feeding in the appropriate stress free Eshelby misfit strain in suitable regions of the model. The critical thickness of various metallic thin films is calculated and compared with standard theory and with available experimental results.