Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage
Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage
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低电源电压下 SRAM 单元的统计写入稳定性表征
DOI：
10.1109/ted.2016.2612678
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发表时间：
2016
影响因子：
3.1
通讯作者：
Toshiro Hiramoto
中科院分区：
文献类型：
--
作者：
Hao Qiu;Tomoko Mizutani;Yoshiki Yamamoto;Hideki Makiyama;Tomohiro Yamashita;Hidekazu Oda;Shiro Kamohara;Nobuyuki Sugii;Takuya Saraya;Masaharu Kobayashi;Toshiro Hiramoto
四个写稳定性指标的表征六晶体管SRAM单元进行了实验评估和比较，在低电源电压（VDD）。使用具有减少的体掺杂的薄BOX上硅技术来实现低电压操作。经证实，两种方法都是优选的，因为它们产生遵循正态分布的度量，这实际上有利于产量估计。相反，与高VDD不同，来自写蝶形曲线的写静态噪声容限和写N曲线电流（IW）都呈现非正态概率分布。详细分析了非正态性产生的原因。
Four write stability metrics for the characterization of six-transistor SRAM cells were experimentally evaluated and compared at low supply voltage (VDD). A silicon-on-thin-BOX technology with reduced body doping was used to achieve low voltage operation. It was confirmed that both bitline and wordline methods are preferable in that they yield metrics that follow normal distributions, which is practically beneficial for the yield estimation. On the contrary, different from at high VDD, both write static noise margin from write butterfly curve and write N-curve current (IW) exhibit non-normal probability distributions. The origins of the non-normality are analyzed in detail.