Micro-coolers fabricated as a component in an integrated circuit
Micro-coolers fabricated as a component in an integrated circuit
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DOI：
10.1088/0268-1242/30/1/015005
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发表时间：
2014
影响因子：
1.9
通讯作者：
J. Glover;A. Khalid;Alex Stephen;G. Dunn;D. Cumming;C. Oxley
中科院分区：
文献类型：
--
作者：
J. Glover;A. Khalid;Alex Stephen;G. Dunn;D. Cumming;C. Oxley
集成电子器件的封装密度和功率容量正在增加，从而导致更高的热通量密度。需要改进的热管理技术，并且一种方法是包括热电冷却器作为集成电路的一部分。将描述示出支撑基板将对热电冷却器的冷却能力具有大的影响的分析。特别地，对于具有低ZT品质因数的材料（例如砷化镓（GaAs）基化合物），衬底将必须充分变薄以获得冷却，这可能排除使用热电冷却器，例如作为GaAs基集成电路的一部分。此外，使用实验技术仅测量阳极（Th）和阴极（Tc）接触之间的小的正冷却温差（ΔT）可能被误解为冷却，而实际上它是加热的。
The packing density and power capacity of integrated electronics is increasing resulting in higher thermal flux densities. Improved thermal management techniques are required and one approach is to include thermoelectric coolers as part of the integrated circuit. An analysis will be described showing that the supporting substrate will have a large influence on the cooling capacity of the thermoelectric cooler. In particular, for materials with a low ZT figure of merit (for example gallium arsenide (GaAs) based compounds) the substrate will have to be substantially thinned to obtain cooling, which may preclude the use of thermoelectric coolers, for example, as part of a GaAs based integrated circuit. Further, using experimental techniques to measure only the small positive cooling temperature difference (ΔT) between the anode (Th) and the cathode (Tc) contacts can be misinterpreted as cooling when in fact it is heating.