22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders
22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders
复制标题
第22届RD50高亮度对撞机抗辐射半导体器件研讨会
DOI：
10.2172/1170535
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发表时间：
2013
影响因子：
1.4
通讯作者：
S. Seidel
中科院分区：
文献类型：
--
作者：
S. Seidel
第 22 届 RD50 高亮度对撞机辐射硬半导体器件研讨会于 2013 年 6 月 3 日至 5 日在新墨西哥大学校园举行。这是该系列会议自 2001 年以来在北美举行的第一次会议。会议内容涵盖材料和缺陷表征、探测器表征、完整探测器系统和新结构。一个为期半天的小型研讨会专门讨论大型强子对撞机实验中的辐射损伤。所有演讲均永久存档，可在 rd50.web.cern.ch 上向公众开放。财政支持用于房间租赁、视听设备租赁和文件准备服务。
The 22nd RD50 Workshop on Radiation Hard Semiconductor Devices for High Luminosity Colliders was held on the campus of the University of New Mexico from June 3 to 5, 2013. This was the first North American meeting of the series going back to 2001. The sessions covered Material and Defect Characterization, Detector Characterization, Full Detector Systems, and New Structures. A half-day mini-workshop was allocated to radiation damage at LHC experiments. All talks are archived permanently available to the public at rd50.web.cern.ch. Financial support was used for room rental audiovisual equipment rental, and document preparation services.